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TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 1 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? w-cdma / lte ? macrocell base station driver ? microcell base station ? small cell final stage ? active antenna ? general purpose applications 20 pin 3x4mm qfn product features ? operating frequency range: dc to 4 ghz ? output power (p sat ): 30 w ? drain efficiency: 64% ? linear gain: 17 db ? package dimensions: 3 x 4 x 0.85 mm functional block diagram 14 15 6 20 19 18 17 7 8 9 10 n/c n/c n/c n/c n/c n/c n/c n/c 5 1 16 12 13 11 23 4 v g , rf in v g , rf in v g , rf in v g , rf in v d , rf out v d , rf out v d , rf out v d , rf out v d , rf out v d , rf out v g , rf in v g , rf in general description the TQP0104 is a wide band over- molded qfn discrete gan power amplifier. the device is a single stage unmatched power amplifier transistor. the TQP0104 can be used in doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. the TQP0104 can also be used as a driver in a macrocell base station power amplifier. the wide bandwidth of the TQP0104 makes it suitable for many different applications from dc to 4 ghz. TQP0104 can deliver p sat of 30 w at 28 to 32 v operation. lead-free and rohs compliant. pin configuration pin no. label 1-6 rf in, v g 7-10, 17-20 n/c 11-16 rf out, v d backside paddle rf/dc gnd ordering information part no. eccn description TQP0104 ear99 30 w, dc to 4 ghz, gan pa TQP0104-2.6-evb ear99 2.5-2.7 ghz eval board TQP0104-2.1-doh ear99 2.1 ghz doherty eval board
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 2 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter rating gate voltage (v g ) ?6 v drain voltage (v d ) +40 v peak rf input power 35 dbm vswr mismatch, p1db pulse (20% duty cycle, 100 s width), t = 25c 10:1 storage temperature ?65 to +150c operation of this device outside the parameter rang es given above may cause permanent damage. recommended operating conditions parameter min typ max units operating temperature ?40 +105 c gate voltage (v g ) ?2.9 v drain voltage (v d ) 32 v quiescent current (i cq ) 60 ma t ch for >10 6 hours mttf 225 c electrical performance is measured under conditions noted in the electrical specifications table. specification s are not guaranteed over all recommended operating condition s. electrical specifications test conditions unless otherwise noted: v g = ?2.73 v, v d = 32 v, i cq = 70 ma, t = 25c, 2.6 ghz single-ended applicatio ns circuit parameter conditions min typ max units frequency range dc 4000 mhz quiescent current 60 70 80 ma linear gain p out = 33 dbm, pulsed (10% duty cycle, 100 s width) 15 17 db p3db pulsed (10% duty cycle, 100 s width) 44.0 44.6 dbm drain efficiency p3db 60 64 % input return loss 11 db
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 3 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal information parameter conditions value units thermal resistance at average power ( jc ) t case = 85c, t ch = 128.0c, cw: p diss = 8.83 w, p out = 1.90 w 4.9 c/w thermal resistance at saturated power ( jc ) t case = 85c, t ch = 173.3c, cw: p diss = 16.80 w, p out = 30.55 w 5.3 c/w notes: 1. thermal resistance measured to package backside. median lifetime 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime (hours) channel temperature (c) median lifetime vs. channel temperature
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 4 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com TQP0104 single-ended evaluation board layout (2500- 2700 mhz) bill of materials ? TQP0104 single-ended evaluation board (2500-2700 mhz) reference des. value description manuf. part number c1, c2, c3, c4 10.0 pf capacitor atc 600s l1, l2 1.8 nh inductor coilcraft 0603hp c9 1.5 pf capacitor atc 600s r1 20 resistor venkel 0603-8 lcr c5, c6 1000 pf capacitor various r2 10 resistor venkel 0603-8 lcr r3 1000 resistor venkel 0603-8 lcr c7 1 f capacitor various r4 0 jumper venkel 0603-8 lcr c8 220 f capacitor, electrolytic various
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 5 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance plots ? TQP0104 single-ended eval. boar d (2500-2700 mhz) test conditions unless otherwise noted: v d = 32 v, i cq = 70 ma, t = 25c, 2.6 ghz single-ended applicatio n circuit 10 11 12 13 14 15 16 17 18 19 20 24 26 28 30 32 34 36 38 40 42 44 46 gain (db) output power (dbm) gain vs. output power temp. = +25c 2500 mhz 2600 mhz 2700 mhz v g = ?2.73 v, v d = 32 v, i cq = 70 ma pulse cw: duty cycle = 20%, pulse period = 500 s 0 10 20 30 40 50 60 70 80 24 26 28 30 32 34 36 38 40 42 44 46 drain efficiency (%) output power (dbm) drain efficiency vs. output power temp. = +25c 2500 mhz 2600 mhz 2700 mhz v g = ?2.73 v, v d = 32 v, i cq = 70 ma pulse cw: duty cycle = 20%, pulse period = 500 s 12 13 14 15 16 17 18 19 20 30 31 32 33 34 35 36 37 38 39 40 41 gain (db) average output power (dbm) gain vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?3.01 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c 0 10 20 30 40 50 60 70 80 30 31 32 33 34 35 36 37 38 39 40 41 drain efficiency (%) average output power (dbm) drain efficiency vs. average output power v g = ?3.01 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf 2500 mhz 2600 mhz 2700 mhz temp. = +25c 36 37 38 39 40 41 42 43 44 45 46 47 48 30 31 32 33 34 35 36 37 38 39 40 41 peak power at 0.01% ccdf (db) average output power (dbm) peak power vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?3.01 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 30 31 32 33 34 35 36 37 38 39 40 41 acpr (dbc) average output power (dbm) acpr vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?3.01 v, v d = 32 v, i cq = 70 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 6 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance plots ? TQP0104 single-ended eval. boar d (2500-2700 mhz) test conditions unless otherwise noted: v d = 32 v, i cq = 70 ma, t = 25c, 2.6 ghz single-ended applicatio n circuit -20 -15 -10 -5 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 21 (db) frequency (ghz) small signal gain vs. frequency temp. = +25c -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 11 , s 22 (db) frequency (ghz) return loss vs. frequency temp. = +25c irl orl
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 7 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull plots test conditions unless otherwise noted: v d = 32 v, i cq = 70 ma, t = c, pulse cw (duty cycle = 20%, pulse period = 500 s)
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 8 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com TQP0104 doherty evaluation board layout (2110-2170 mhz) bill of materials ? TQP0104 doherty evaluation boar d (2110-2170 mhz) reference des. value description manuf. part number c1, c2, c3, c8, c9, c10, c11, c12, c13, c14, c25, c26 33 pf capacitor atc 600f c4, c5 3.3 pf capacitor atc 600s c6, c7 1.8 pf capacitor atc 600s c15, c16, c17, c18 1 f capacitor c19, c20, c21, c22 10 f capacitor c23, c24 220 f capacitor, electrolytic united chemi-con r1, r2 10 resistor r3 50 resistor, 10 w atc cs12010t0050gbk x1 hybrid coupler, 2.0-2.3 ghz anaren jp503s/jp503as
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 9 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance plots ? TQP0104 doherty evaluation boar d (2110-2170 mhz) test conditions unless otherwise noted: v g,carrier = ?2.81 v, v g,peaking = ?4.7 v, v d = 32 v, i cq = 100 ma, t = 25c, 2.1 ghz doherty application circuit 12 13 14 15 16 17 18 19 20 30 31 32 33 34 35 36 37 38 39 40 41 42 gain (db) average output power (dbm) gain vs. average output power 2110 mhz 2140 mhz 2170 mhz temp. = +25c single carrier wcdma, 64 dpch par = 10 db @ 0.01% ccdf 0 10 20 30 40 50 60 70 30 31 32 33 34 35 36 37 38 39 40 41 42 drain efficiency (%) average output power (dbm) drain efficiency vs. average output power 2110 mhz 2140 mhz 2170 mhz temp. = +25c single carrier wcdma, 64 dpch par = 10 db @ 0.01% ccdf 38 39 40 41 42 43 44 45 46 47 48 49 50 30 31 32 33 34 35 36 37 38 39 40 41 42 peak power @ 0.01% ccdf (dbm) average output power (dbm) peak power vs. average output power 2110 mhz 2140 mhz 2170 mhz temp. = +25c single carrier wcdma, 64 dpch par = 10 db @ 0.01% ccdf -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 30 31 32 33 34 35 36 37 38 39 40 41 42 acpr (dbc) average output power (dbm) acpr vs. average output power temp. = +25c 2110 mhz 2140 mhz 2170 mhz single carrier wcdma, 64 dpch par = 10 db @ 0.01% ccdf -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 30 31 32 33 34 35 36 37 38 39 40 41 42 acpr (dbc) average output power (dbm) 2 carrier wcdma linearized acpr vs. p out temp. = +25c no dpd dpd 2 carrier wcdma par = 6.5 db @ 0.01% ccdf 5 mhz sbw per carrier f c = 2140 mhz, ibw = 3.84 mhz
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 10 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin configuration and description 14 15 6 20 19 18 17 7 8 9 10 n/c n/c n/c n/c n/c n/c n/c n/c 5 1 16 12 13 11 23 4 v g , rf in v g , rf in v g , rf in v g , rf in v d , rf out v d , rf out v d , rf out v d , rf out v d , rf out v d , rf out v g , rf in v g , rf in pin no. label description 1, 2, 3, 4, 5, 6 rf in, v g rf input, gate bias 7, 8, 9, 10, 17, 18, 19, 20 n/c no connection 11, 12, 13, 14, 15, 16 rf out, v d rf output, drain bias backside paddle rf/dc gnd rf/dc ground
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 11 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com package marking and dimensions marking: part id ? 0104 year/workweek ? yyww ?m? + lot number ? mxxx notes: 1. all dimensions are in millimeters. angles are in degrees. pcb mounting pattern notes: 1. all dimensions are in millimeters. angles are in degrees. 0104 yyww mxxx
TQP0104 30 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev f 09-28-15 - 12 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: class 1b value: passes 600 v test: human body model (hbm) standard: jedec standard js-001-2012 esd rating: class c3 value: passes 1000 v test: charged device model (cdm) standard: jedec standard jesd22-c101f solderability compatible with both lead- free (260c maximum reflow temperature) and tin/lead (245c maximum reflow temperature) soldering processes. contact plating: nipdau rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating msl rating: level 3 test: 260c convection reflow standard: jedec standard ipc/jedec j-std-020d.1 eccn us department of commerce ear99 contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: btsapplications@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding th e information contained herein. triquint assumes no responsibility or liability whatsoever f or any of the information contained herein. triquint assumes no responsibility or liability wha tsoever for the use of the information contained he rein. the information contained herein is provided "as is , where is" and with all faults, and the entire ris k associated with such information is entirely with the user. all information contained herein is subject to chan ge without notice. customers should obtain and verify the latest relev ant information before placing orders for triquint products. the information contained herein or any use of such inf ormation does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to su ch information itself or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reason ably be expected to cause severe personal injury or death.

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